*******************************************************
* Taiwan Semiconductor
* TSM60NC980CP
* N-Channel 600V
* Date: 2023-10-26
* Version: 1
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.SUBCKT TSM60NC980CP D G S
M1 3 GX S S NMOS W= 501338u L= 2u 
M2 S GX S D PMOS W= 501338u L= 1.48498u   
R1 D 4 0.370195 TC=10.8e-03,0.355e-04
J1 4 S 3 JD 651338u 
.MODEL JD NJF (VTO = -20.10  BETA = 0.839e-01 LAMBDA = 0.626e-02 
+BETATCE = -5.9e-01 VTOTC = -0.0
+IS = 1e-18 N = 10 )
CGS GX S 1.e-12 
CGD GX D 3.004e-12 
RG G GY 1m
RTCV 100 S 1e6 TC=-0.300e-03,0
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD
DBD2 S D DBD2
CBD S D 3p
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ KP = 25.15e-06 NSUB = 11.543e+16 theta=0.15
+ NFS = 2.355e+11  
+ LD = 0 IS = 0 TPG = 1 )
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.MODEL PMOS PMOS ( LEVEL = 3 TOX = 10e-8 
+NSUB = 5.000e+15 IS = 0 TPG = -1    )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 6.01E-7 T_measured = 25 BV = 670
+TBV1=1.3175E-03  TBV2=-1.2856E-06  IKF=1.0909
+RS = 13.074E-3 N = 1.1 IS =1.2284E-12
+XTI = 2.474e+00 TRS1 = 2.51e-03	EG=1.16
+CJO = 2007.5E-12 VJ = 18.00 M = 2.65)  
****************************************************************
.MODEL DBD2 D ( 
+FC = 0.1 T_measured = 25 BV = 670
+TBV1=1.3175E-03  TBV2=-1.2856E-06
+N = 100 IS =1.E-30
+EG=1.16
+CJO = 27E-12 VJ = 0.50 M = 0.9 )  
****************************************************************
.ENDS